The principal chemical processes and mechanisms that enable Area Selective Deposition (ASD) are rapidly becoming critical in several areas of materials and technological advancement. New ASD processes will be needed to enable “chemical alignment” to complement traditional physical alignment (i.e. lithography) and allow transistors to scale to below 10 nm dimensions. Other fields are also exploring chemical selectivity in materials to achieve precise targeted performance. Catalytic materials, for example, which are commonly employed to promote chemically selective reactions, are now being designed and constructed using site-selective deposition reactions. In addition, the growing complexity of energy generation and storage materials are also driving the need for new site- or area-selective processes to control heterogeneous material structures.
To share advances in these areas, the 5th Area Selective Deposition Workshop (ASD 2020), will be held on April 2 – 3, 2020, at Stanford University in Palo Alto, California USA. The Workshop will bring together leading international scientists and engineers from academia and industry from all regions to share results and insights into: 1) fundamental principles and barriers to area selective deposition; 2) technological needs and challenges as well as new applications of ASD; 3) new chemical approaches and processes to address the expanding needs; and 4) surface characterization techniques and metrology innovation for ASD.
Based on past four successful workshops, ASD 2020 will consist of two days of presentations and discussions, with a banquet dinner for all registered attendees at Stanford University on April 2nd. The program will include a series of invited and contributed speakers as well as a poster session reception on the evening of April 3rd.